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This is an overview of 24.00 x 24.00 mil silicon photodiode chips. We can assist customers in technology development by providing 3-inch (traditional diffusion process) or 6-inch (particle injection process) silicon wafer plate drawings or customized designs, helping customers in the field of optoelectronic detection with technology research and development, related new product derivatives, and scientific research. We retail chips or provide you with finished products in different packaging forms, such as TO metal, ceramic SMT、 Arrays and modules, etc.
1.Scope :
This specification applies to PIN silicon photodiode chips, Device No. LXD-PIN0610-1.
2-1. Planar type: PIN diode. 2-2. Electrodes: Top side (Anode): Aluminum alloy. Back side (Cathode): Gold alloy.
3-1. Chip size: 24 mils × 24 mils (0.610 mm × 0.610 mm).
3-2. Chip thickness: 7.5 ± 1.5 mils (0.19 ± 0.038 mm).
3-3. Active area: 17 mils × 17 mils (0.432 mm × 0.432 mm).
3-4. Bonding pad (Anode): 5.0 mils (0.127 mm) diameter.
3-5. Pattern drawing: refer to the attached drawing.
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| *Reverse dark Current | ID | VR=10VEe=0mW/cm² | — | — | 10 | nA |
| *Reverse breakdown voltage | V(BR)R | IR=100uAEe=0mW/cm² | 33 | — | — | V |
| Open circuit voltage | Voc | T=2856KEe=5mW/cm² | — | 390 | — | mV |
| Short circuit Current | Isc | T=2856KEe=5mW/cm² | — | 2 | — | μA |
| Reverse light current | IL | VR=5VT=2856KEe=5mW/cm² | — | 2 | — | μA |
| Total Capacitance | CT | VR=5VEe=0mW/cm²f=1MHz | — | 1 | — | pF |
