23.6x33.5 mils Silicon Photodiode Chip High modulation bandwidth

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1. Scope :
This specification applies to PN silicon photodiode chips,
Device NO. LXD-PN06085-2

1-1 This specification applies to extra high speed PIN silicon photodiode chips. Device No. PD-1233
1-2 High modulation bandwidth (>100MHz)
1-3 Design for irda transmission systems requirement.
1-4 Low applied voltage , low junction capacitance , low series resistance.

2-2. Electrodes :
Top side (Anode) : Aluminum alloy . Back side (Cathode ) : Gold alloy .

3. Size :

3-1. Chip size : 23.6 mils x 33.5 mils (0.60 mmx0.85 mm ).

3-2. Chip thickness : 8.6 x 1.2 mils (0.220x0.030mm ).

3-3. Active area : 17.7 mils x 27.6 mils (0.45 mm 0.70 mm ).

3-4. Bonding pad (Anode ) : 4 mils x 4mils (0.10mm 0.10 mm) .

3-5. Pattern drawing : Refer to the attached drawing.

Electro-optical characteristics (Ta = 25 )

Parameter	Symbol	Condition	Min.	Typ.	Max.	Unit
Reverse light current	IL	V_R=5V, T=2856K, Ee=5mW/cm²	2	—	—	μA
*Reverse dark current	ID	V_R=5V, Ee=0mW/cm²	—	—	10	nA
*Reverse breakdown voltage	V(BR)R	I_R=100μA, Ee=0mW/cm²	50	—	—	V
*Forward voltage	VF	I_F=100mA	—	1.2	1.5	V
Total capacitance	Ct	V_R=5V, Ee=0mW/cm², f=1MHz	—	-	2.0	pF
Responsivity	Rφ	V_R=10V, λ=880nm	—	0.50	—	A/W
Responsivity	Rφ	V_R=10V, λ=650nm	—	0.3	—	A/W

* Based on 100% probing

no form by the id.