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21.00 x 21.00 mils Silicon Photodiode Chip

This is an overview of 21.00 x 21.00 mil silicon photodiode chips. We can assist customers in technology development by providing 3-inch (traditional diffusion process) or 6-inch (particle injection process) silicon wafer plate drawings or customized designs, helping customers in the field of optoelectronic detection with technology research and development, related new product derivatives, and scientific research. We retail chips or provide you with finished products in different packaging forms, such as TO metal, ceramic SMT、 Arrays and modules, etc.

Detail Contact Us

1. Scope
‧The specification applies to PIN silicon photo-diode chips. 
‧Type:LXD-PN0525

2. Structure 
PIN planar type. 
‧Electrode topside(anode) :Aluminum. 
 backside(cathode):Gold alloy. 
3. Size 
Chip size :21mil × 21mil ± 0.500mil (0.525mm × 0.525mm ± 0.013mm) 
‧Thickness :6mil ±1mil (0.150mm ± 0.025mm) 
‧Active area :15mil × 15ml

4. Electro-Optical Characteristics

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit.

Forward Voltage

VF

IF=10mA, H=0

0.5

1.3

V

Reverse Breakdown Voltage

VBR

IR=100μA, H=0

35

V

Reverse Dark Current

ID

VR=10V, H=0

2

10

nA

Light Current

IL

VR=5V, H as 6mw/cm2@940nm

5.8

uA

Peak Sensing Wavelengh

λp

940

nm

Junction Capacitance

CJ

VR=5V, H=0, F=1 MHz

2

pF

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