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Silicon PIN photodiode for illuminance power measurement Chip size 10*10mm

Silicon PIN photodiode for illuminance power measurement Chip size 10*10mm

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Silicon PIN photodiode for illuminance power measurement Chip size 10*10mm

 

10.07× 10.07mm COMMON ANODE TYPE .SILICON PN PHOTO DIODE CHIP LXD-PIN1010CP

 

 

■Description: 

The LXD-PIN11145-PCB is a 96 mm2 active area Silicon photodiode assembled on a 2-pin unsealed package. The photo detector has spectral range from 380nm to 1100nm and it wavelength including the visible to near IR range.

■Features:

-Fast response time
-High photo sensitivity 

■Applications 

-Optical equipments
-Analytical instruments
-Measurements equipments
-Exposure meter  
-Illuminometer  
-Optical switch 

■Absolute Maximum Ratings TYP.

 

Parameter Symbol Min Max Unit
Operating Temperature TOP -25 +65 ºC
Storage Temperature TSTG -25 +75 ºC
Package — Unsealed —

●ELECTRICAL / OPTICAL CHARACTERISTICS ( Ta = 25℃ )

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Forward Voltage

VF

IF=10mA,

0.5

0.8

1.5

V

Reverse Breakdown Voltage

BVR

IR=10uA

30

 

 

V

Dark Current

ID

VR=10V

 

10

 

nA

Spectrum Sensitivity

λ

 

430~1100

nm

Peak Sensing Wavelength

λP

 

 

880

 

nm

Note(1):Parallel light of 1,000Lux illumination is applied by a Tungsten lamp of 2856k.

■Typical Spectral Response

■Typical Outline (Unti:mm)

 

Care and handling instructions

• These components can be rendered inoperable if dropped or sharply jarred. The wire bonds are delicate and can become separated from the bonding pads when the component is dropped or otherwise receives a sharp physical blow. • Most windows on photodiodes are either silicon or quartz. They should be cleaned with isopropyl alcohol and a soft (optical grade) pad. • Photodiode exposure to extreme high or low storage temperatures can affect the subsequent performance. Maintain a non-condensing environment for optimum performance and lifetime. • All devices are considered ESD sensitive. The photodiodes are shipped in ESD protective packaging. When unpacking and using these products, anti-ESD precautions should be observed. • Photodiode packages and/or operation may be impaired if exposed to CHLOROETHENE, THINNER, ACETONE, TRICHLOROETHYLENE or any harsh chemicals.


Information in this technical datasheet is believed to be correct and reliable.However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice.

• Optoelectronic components in plastic packages Should be given special care. Clear plastic packages are more sensitive to environmental stress than those of black plastic. Storing devices in high humidity can present problems when soldering. Since the rapid heating during soldering stresses the wire bonds and can cause wire to bonding pad separation, it is recommended that devices in plastic packages to be baked for 24 hours at 85ºC.

• The leads on the photodiode SHOULD NOT BE FORMED. If your application requires Lead spacing modification, please contact Advanced LONGXINDA TECH Applications group at wusheng888@126.com before forming a product’s leads. Product warranties could be voided.

• Most devices are provided with wire or pin leads for installation in circuit boards or sockets. Observe the soldering temperatures and conditions specified below: • Soldering Iron: Soldering 30 W or less • Temperature at tip of iron 280°C or lower. • Dip Soldering: Bath Temperature: 260±5°C. • Immersion Time: within 5 Sec. • Soldering Time: within 3 Sec. • Vapor Phase Soldering, Reflow Soldering: DO NOT USE.

 

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