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5.8x5.8mm SILICON PHOTODIODES CHIP LXD-PIN66

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●DIE SIZE 6.0× 6.0 mm2

●DIE THICKNES 300 ± 20um

●METALLIZATION

TOP Al

BOTTOM Ag

●PASSIVATION Silicon Oxide

●BONDING PAD SIZE

CATHODE（TOP） 150um×150um

ANODE (BOTTOM)

●ACTIVE AREA 5.705×5.705 mm2

●ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ )

Parameter	Symbol	Maximun rating	Unit
Reverse Breakdown Voltage	BVR	30	V
Junction Temperature	TJ	150	℃

●ELECTRICAL / OPTICAL CHARACTERISTICS ( Ta = 25℃ )

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Forward Voltage	V_F	IF=10mA，	0.5	0.8	1.5	V
Reverse Breakdown Voltage	B_VR	IR=10uA	30			V
Dark Current	I_D	VR=10V			10	nA
Spectrum Sensitivity	λ		430～1100			nm
Peak Sensing Wavelength	λ_P			880		nm

Note(1):Parallel light of 1,000Lux illumination is applied by a Tungsten lamp of 2856k.

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5.8x5.8mm SILICON PHOTODIODES CHIP LXD-PIN66

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