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This is an overview of 180.00 x 180.00 mil silicon photodiode chips. We can assist customers in technology development by providing 3-inch (traditional diffusion process) or 6-inch (particle injection process) silicon wafer plate drawings or customized designs, helping customers in the field of optoelectronic detection with technology research and development, related new product derivatives, and scientific research. We retail chips or provide you with finished products in different packaging forms, such as TO metal, ceramic SMT、 Arrays and modules, etc.
Scope :
This specification applies to PIN silicon photodiode chips array (22), Device No. LXD-PIN2250X2
Structure :
2-1. Planar type : PIN diode.
2-2. Electrodes :
Top side (Anode
) : Aluminum alloy . Back side ( Cathode ) : Gold alloy.
3. Size :
3-1. Chip size : 902 mils × 902 mils (2.2502 mm × 2.2502 mm ). 3-2. Chip thickness : 12 ± 1.5mils ( 0.305 ± 0.038mm).
3-3. Active area : 802 mils ×802 mils (2.0002 mm × 2.0002 mm ). 3-4. Bonding pad (Anode) : 6.5 mils × 6.5 mils (0.165mm × 0.165 mm ) 3-5. Pattern drawing : refer to the attached drawing.
4. Electro-optical characteristics (Ta = 25 ℃)_each chip
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| ※Reverse dark Current | ID | VR=10VEe=0mW/cm² | 30 | nA | ||
| ※Reverse breakdown voltage | V(BR)R | IR=100uAEe =0mW/cm² | 33 | V | ||
| Open circuit Voltage | VOC | T=2856KEe =5mW/cm² | 390 | mV | ||
| Short circuit Current | ISC | T=2856KEe=5mW/cm² | 30 | 40 | μA | |
| Reverse light Current | IL | VR =5VT=2856KEe=5mW/cm² | 30 | 40 | μA | |
| Total Capacitance | Ct | VR =5VEe=0mW/cm²f=1MHz | 11 | pF | ||
| Turn-on/Turn-off Time | ton/toff | VR=5VRL=50Ωλ=850nm | 50/50 | nS |
※Based on 100% probing
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