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This is an overview of 15.7x15.7 mil silicon photodiode chips. We can assist customers in technology development by providing 3-inch (traditional diffusion process) or 6-inch (particle injection process) silicon wafer plate drawings or customized designs, helping customers in the field of optoelectronic detection with technology research and development, related new product derivatives, and scientific research. We retail chips or provide you with finished products in different packaging forms, such as TO metal, ceramic SMT、 Arrays and modules, etc.
1. Scope :
This specification applies to high speed photodiode chips,
Device No. PD-PN157
2. Structure :
2-1. Planar type : PIN diode.
2-2. Electrodes :
Top side (Anode ) : Aluminum alloy .
Back side (Cathode) : Gold alloy .
3. Size :
3-1. Chip size : 17.3 mils × 17.3 mils (0.44 mm × 0.44 mm ).
3-2. Chip thickness : 12 ± 1.5mils (0.305 ± 0.038mm).
3-3. Active area : 7.24 mils (0.184 mm ) Diameter.
3-4. Bonding pad ( Anode ) : 3.3 mils (0.084mm) Diameter.
3-5. Pattern drawing : Refer to the attached drawing.
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Reverse dark current | ID | VR=5V，Ee=0mW/cm² | — | — | 5 | nA |
| Forward voltage | Vf | If=10mA，Ee=0mW/cm² | — | — | 1.2 | V |
| Reverse breakdown voltage | V(BR)R | IR=100μA，Ee=0mW/cm² | 60 | — | — | V |
| Total Capacitance | Ct | VR =3V，Ee=0mW/cm²，f=1MHz | — | 1.5 | — | pF |
※Based on 100% probing
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