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COMMON ANODE TYPE PN PHOTO DIODE.
●DIE SIZE: 10.07× 10.07 mm
DIE THICKNES 300 ± 20um
●METALLIZATION
TOP: Al
BOTTOM: Ag
●PASSIVATION: Silicon Oxide
●BONDING PAD SIZE
CATHODE（TOP）: 150um×200um
ANODE (BOTTOM)
●ACTIVE AREA: 9.765× 9.86 mm2
●ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ )
|
Parameter |
Symbol |
Maximun rating |
Unit |
|
Reverse Breakdown V3oltage |
BVR |
30 |
V |
●ELECTRICAL / OPTICAL CHARACTERISTICS ( Ta = 25℃ )
|
Parameter |
Symbol |
Condition |
Min |
Typ |
Max |
Unit |
|
Forward Voltage |
VF |
IF=10mA， |
0.5 |
0.8 |
1.5 |
V |
|
Reverse Breakdown Voltage |
BVR |
IR=10uA |
30 |
|
|
V |
|
Dark Current |
ID |
VR=10V |
|
|
10 |
nA |
|
Spectrum Sensitivity |
λ |
|
430～1100 |
nm |
||
|
Peak Sensing Wavelength |
λP |
|
|
880 |
|
nm |
Note(1):Parallel light of 1,000Lux illumination is applied by a Tungsten lamp of 2856k.
■ TYPICAL SPECTRAL RESPONSE
