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Silizium-Photodioden-Chip

3.0x3.0mm SILICON PHOTODIODES CHIP LXD-PIN33

3.0x3.0mm SILICON PHOTODIODES CHIP LXD-PIN33

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3.0x3.0mm SILICON PHOTODIODES CHIP LXD-PIN33

grade PIN Silicon Photo-diode Chip Specification

1. Scope

The specification applies to PIN silicon photo-diode chips.
Type : LXDPIN120-G.

2. Structure

PIN planar type.
Electrode topside (anode) : Aluminum.
Electrode backside (cathode) : Gold.

3. Size

Chip size (including scribe lane) : 120.0mil × 120.0mil (3.048mm × 3.048mm)
Die size : 118.8mil × 118.8mil ± 0.6mil (3.018mm × 3.018mm ± 0.015mm)
Thickness : 11.8mil ± 1mil (0.300mm ± 0.025mm)
Active area : 110.0mil × 110.0mil ± 0.5mil (2.794mm × 2.794mm ± 0.013mm)
Pad size : Diameter 8mil ± 0.4mil (0.203mm ±0.01mm )
Pattern drawing : per fig. 1

4. Electro-Optical Characteristics(Ta=+25℃)

Parameter	Symbol	Condition	Min.	Typ.	Max.	Unit.
Forward Voltage	V_F	IF=10mA, H=0	0.5	—	1.3	V
Reverse Breakdown Voltage	V_BR	IR=100μA, H=0	35	—	—	V
Reverse Dark Current	I_D	VR=10V, H=0	—	—	10	nA
Light Current	I_L	VR=5V, H as 1mW/cm²@940nm	—	162	—	μA
Junction Capacitance	C_J	VR=3V, Vac=0.1V, H=0, F=1MHz	—	44	—	pF
Peak Sensing Wavelength	λ_P	—	—	940	—	nm

Fig.1 Pattern Drawing Description

no form by the id.

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