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4.3x4.3mm SILICON PHOTODIODES CHIP LXD-PIN44

4.3x4.3mm SILICON PHOTODIODES CHIP LXD-PIN44

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4.3x4.3mm SILICON PHOTODIODES CHIP LXD-PIN44

●DIE SIZE                   4.3× 4.3 mm

●DIE THICKNES         300 ± 20um

●METALLIZATION

TOP         Al

BOTTOM    Ag 

●PASSIVATION               Silicon Oxide 

●BONDING PAD SIZE

CATHODE(TOP)       150um×200um

ANODE (BOTTOM) 

●ACTIVE AREA              4.02× 4.02 mm

●ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ )

Parameter

Symbol

Maximun rating

Unit

Reverse Breakdown Voltage

BVR

30

V

 

●ELECTRICAL / OPTICAL CHARACTERISTICS ( Ta = 25℃ )

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Forward Voltage

VF

IF=10mA,

0.5

0.8

1.5

V

Reverse Breakdown Voltage

BVR

IR=10uA

30

 

 

V

Dark Current

ID

VR=10V

 

 

10

nA

Spectrum Sensitivity

λ

 

430~1100

nm

Peak Sensing Wavelength

λP

 

 

880

 

nm

Note(1):Parallel light of 1,000Lux illumination is applied by a Tungsten lamp of 2856k.

 

 

 

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