Puces de photodiode en silicium

4.3x4.3mm SILICON PHOTODIODES CHIP LXD-PIN44

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●DIE SIZE 4.3× 4.3 mm

●DIE THICKNES 300 ± 20um

●METALLIZATION

TOP Al

BOTTOM Ag

●PASSIVATION Silicon Oxide

●BONDING PAD SIZE

CATHODE（TOP） 150um×200um

ANODE (BOTTOM)

●ACTIVE AREA 4.02× 4.02 mm

●ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ )

Parameter	Symbol	Maximun rating	Unit
Reverse Breakdown Voltage	B_VR	30	V

●ELECTRICAL / OPTICAL CHARACTERISTICS ( Ta = 25℃ )

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Forward Voltage	V_F	I_F=10mA，	0.5	0.8	1.5	V
Reverse Breakdown Voltage	B_VR	I_R=10uA	30			V
Dark Current	I_D	V_R=10V			10	nA
Spectrum Sensitivity	λ		430～1100			nm
Peak Sensing Wavelength	λ_P			880		nm

Note(1):Parallel light of 1,000Lux illumination is applied by a Tungsten lamp of 2856k.

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Puces de photodiode en silicium

4.3x4.3mm SILICON PHOTODIODES CHIP LXD-PIN44

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