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This is an overview of 236.00 x 236.00 mil silicon photodiode chips. We can assist customers in technology development by providing 3-inch (traditional diffusion process) or 6-inch (particle injection process) silicon wafer plate drawings or customized designs, helping customers in the field of optoelectronic detection with technology research and development, related new product derivatives, and scientific research. We retail chips or provide you with finished products in different packaging forms, such as TO metal, ceramic SMT、 Arrays and modules, etc.
1. Scope :
This specification applies to PN silicon photodiode chips,
Device No. LXD-PN236236.
2. Structure :
2-1. Planar type : P on N diode.
2-2. Electrodes :
Top side (Anode ) : Aluminum alloy .
Back side (Cathode ) : Gold alloy .
3. Size :
3-1. Chip size : 236 mils Ø 236 mils ( 6 mm Ø 6 mm ).
3-2. Chip thickness : 15 ² 1.5 mils ( 0.381² 0.038 mm ).
3-3. Active area : 223 mils Ø 223 mils ( 5.67 mm Ø 5.67 mm ).
3-4. Bonding pad (Anode ) : 8 mils Ø 8 mils ( 0.2 mm Ø 0.2 mm ).
3-5. Pattern drawing : Refer to the attached drawing.
4. Electro-optical characteristics (Ta = 25 к)
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Reverse dark Current |
ID | VR=5V Ee=0mW/cm² |
100 | nA | ||
| Reverse breakdown voltage |
V(BR)R | IR=20uA Ee=0mW/cm² |
10 | V | ||
| Forward Voltage |
VF(L) | IF=100uA | 0.35 | V | ||
| Short circuit Current |
Isc | T=2856K Ee=5mW/cm² |
300 | uA | ||
| Turn-on/ Turn-off Time |
ton/toff | VR=5V RL=50Ω 入=850nm |
150/150 | nS |
*Based on 100% probing
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1. Scope :
This specification applies to PN silicon photodiode chips,
Device No. LXD-PN236236A.
2. Structure :
2-1. Planar type : P on N diode.
2-2. Electrodes :
Top side (Anode ) : Aluminum alloy .
Back side (Cathode ) : Gold alloy .
3. Size :
3-1. Chip size : 236 mils Ø 236 mils ( 6 mm Ø 6 mm ).
3-2. Chip thickness : 15 ² 1.5 mils ( 0.381² 0.038 mm ).
3-3. Active area : 223 mils Ø 223 mils ( 5.67 mm Ø 5.67 mm ).
3-4. Bonding pad (Anode ) : 8 mils Ø 8 mils ( 0.2 mm Ø 0.2 mm ).
3-5. Pattern drawing : Refer to the attached drawing.
4. Electro-optical characteristics (Ta = 25 к)
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Reverse dark Current |
ID | VR=5V Ee=0mW/cm² |
30 | nA | ||
| Reverse breakdown voltage |
V(BR)R | IR=20uA Ee=0mW/cm² |
30 | V | ||
| Forward Voltage |
VF(L) | IF=100uA | 1.2 | V | ||
| Short circuit Current |
Isc | T=2856K Ee=5mW/cm² |
320 | uA | ||
| Turn-on/ Turn-off Time |
ton/toff | VR =5V Ee=0mW/cm2 f=1MHZ |
150/150 | nS |
*Based on 100% probing
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